Growth of SnO 2 thin films on self-assembled layers of the short-chain alkoxysilane

The growth behavior and structure of self-assembled layers of short-chain alkoxysilane of 3-mercaptopropyltrimethoxysilane (MPS) on hydroxyl-terminated substrates were investigated using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. It was ind...

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Bibliographic Details
Published inApplied surface science Vol. 245; no. 1; pp. 94 - 101
Main Authors Zhang, Jin-Li, Li, Wei, Zhai, Yi, Yang, Hong, Wang, Yi-Ping
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.05.2005
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Summary:The growth behavior and structure of self-assembled layers of short-chain alkoxysilane of 3-mercaptopropyltrimethoxysilane (MPS) on hydroxyl-terminated substrates were investigated using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. It was indicated that the self-assembled layers of MPS formed island structures and deposited integrally on the substrates. Further, the deposition of SnO 2 thin films on the MPS-coated substrates was studied using X-ray diffraction (XRD), AFM, XPS, and the high-resolution stylus profilometers. It was proved that uniform and compact SnO 2 thin films indeed formed on the self-assembled layers of short-chain MPS. The as-deposited SnO 2 films were cassiterite and showed the property of semiconductors, which would have wide applications in gas sensors, solar cells, catalysts, etc.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.09.114