Growth of SnO 2 thin films on self-assembled layers of the short-chain alkoxysilane
The growth behavior and structure of self-assembled layers of short-chain alkoxysilane of 3-mercaptopropyltrimethoxysilane (MPS) on hydroxyl-terminated substrates were investigated using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. It was ind...
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Published in | Applied surface science Vol. 245; no. 1; pp. 94 - 101 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
30.05.2005
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Subjects | |
Online Access | Get full text |
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Summary: | The growth behavior and structure of self-assembled layers of short-chain alkoxysilane of 3-mercaptopropyltrimethoxysilane (MPS) on hydroxyl-terminated substrates were investigated using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. It was indicated that the self-assembled layers of MPS formed island structures and deposited integrally on the substrates. Further, the deposition of SnO
2 thin films on the MPS-coated substrates was studied using X-ray diffraction (XRD), AFM, XPS, and the high-resolution stylus profilometers. It was proved that uniform and compact SnO
2 thin films indeed formed on the self-assembled layers of short-chain MPS. The as-deposited SnO
2 films were cassiterite and showed the property of semiconductors, which would have wide applications in gas sensors, solar cells, catalysts, etc. |
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ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2004.09.114 |