Photoeffect spectra in silicon at different states of bulk and surface: I. Theoretical analysis

A theoretical analysis of the spectral and field dependences of the photoeffects (photovoltage PV and photoconductivity PC) has been carried out, taking into account some new mechanisms: electrostatic nonequilibrium photopinch (PP) and photocarrier surface trapping. It is shown, for example, that th...

Full description

Saved in:
Bibliographic Details
Published inSurface science Vol. 32; no. 2; pp. 365 - 376
Main Authors Zuev, V.A., Litovchenko, V.G.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1972
Online AccessGet full text

Cover

More Information
Summary:A theoretical analysis of the spectral and field dependences of the photoeffects (photovoltage PV and photoconductivity PC) has been carried out, taking into account some new mechanisms: electrostatic nonequilibrium photopinch (PP) and photocarrier surface trapping. It is shown, for example, that the PP affects only the shape of the PC spectrum. A combined method of semiconductor parameter study is proposed which consists of a comparison of the PC spectra and the PV spectra.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(72)90166-5