Input-resistance reduced gm-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication

This paper proposes a transimpedance amplifier (TIA) for a 100 Gb/s optical receiver. The proposed TIA adopts a gm-boosted common-gate input stage with a diode-connected transistor, which lowers the input resistance resulting in a high input pole frequency. It was designed and fabricated in 32 nm CM...

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Bibliographic Details
Published inMicroelectronics Vol. 114
Main Authors Chong, Joseph, Pour, Fariborz Lohrabi, Ha, Dong Sam
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2021
Subjects
gm -boosted
gm-boosted common-gate amplifier (GBCG) optical communications
Optical receiver
Transimpedance amplifier (TIA)
Optical receiver
gm-boosted common-gate amplifier (GBCG) optical communications
Transimpedance amplifier (TIA)
gm -boosted
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Summary:This paper proposes a transimpedance amplifier (TIA) for a 100 Gb/s optical receiver. The proposed TIA adopts a gm-boosted common-gate input stage with a diode-connected transistor, which lowers the input resistance resulting in a high input pole frequency. It was designed and fabricated in 32 nm CMOS SOI technology. Measurement results indicate that the TIA achieves a bandwidth of 74 GHz and a transimpedance gain of 26 dBΩ while dissipating 16.5 mW under 1.5 V supply voltage. The bandwidth of the proposed TIA is larger by 48% or more when compared with state-of-the art TIAs.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2021.105155