Temperature dependence of thermoelectric properties of Ni-doped CoSb 3

• Published in: The Journal of physics and chemistry of solids Vol. 66; no. 10; pp. 1635 - 1639
• Main Authors: Kitagawa, Hiroyuki, Wakatsuki, Machiko, Nagaoka, Hisanori, Noguchi, Hiroyuki, Isoda, Yukihiro, Hasezaki, Kazuhiro, Noda, Yasutoshi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2005
• Subjects: A. Intermetallic compounds; A. Semiconductors; D. Electrical properties; D. Thermal conductivity; D. Transport properties; D. Transport properties; A. Intermetallic compounds; D. Thermal conductivity; A. Semiconductors; D. Electrical properties
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/j.jpcs.2005.05.077

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb 3 have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb 3 is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co 1− x Ni x Sb 3 is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10 −4 K −1 at 600 K, was obtained for x=0.05.