Electronic transport, magnetism and colossal magnetoresistance of (La 0.7−3 xTb x)(Ca 0.3Sr 2 x)MnO 3 (0.025⩽ x⩽0.125) compounds
Structural, electrical, magnetization and magnetoresistance measurements have been performed on (La 0.7−3 x Tb x )(Ca 0.3Sr 2 x )MnO 3 (0.025⩽ x⩽0.125) compounds. Simultaneous substitution of Tb 3+ and Sr 2+ has been made to study the effect of increasing carrier density and size disorder on the ele...
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Published in | Journal of magnetism and magnetic materials Vol. 271; no. 2; pp. 215 - 223 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2004
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Subjects | |
Online Access | Get full text |
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Summary: | Structural, electrical, magnetization and magnetoresistance measurements have been performed on (La
0.7−3
x
Tb
x
)(Ca
0.3Sr
2
x
)MnO
3 (0.025⩽
x⩽0.125) compounds. Simultaneous substitution of Tb
3+ and Sr
2+ has been made to study the effect of increasing carrier density and size disorder on the electronic and magnetic properties. These samples crystallize in a distorted orthorhombic structure (space group Pnma). Insulator–metal (I–M) transition temperature (
T
p) decreases from 193
K for
x=0.025 to 100
K for
x=0.075 and then shows a small rise to 118
K for
x=0.10 sample. In metallic region and in zero magnetic field, the temperature (
T) dependence of the resistivity (
ρ) of
x=0.025 and 0.05 samples follows the two-magnon scattering law (
ρ∝
T
4.5). However, in a field of 5
Tesla, the resistivity of
x=0.025 sample obeys unconventional one-magnon scattering law (
ρ∝
T
3), which points towards field-induced suppression of spin fluctuations. In semiconducting region, the resistivity of all the samples obeys Mott's variable range hopping model (
ρ∝
T
−0.25). The Curie temperature (
T
C) falls less rapidly (200
K for
x=0.025 to 130
K for
x=0.10) than the I–M transition temperature. This disparity between
T
C and
T
p may be attributed to the phase segregation, which is also evident from deviation of magnetic susceptibility from the Curie–Weiss behavior. Magnetoresistance measurements up to a field of 9
Tesla reveal that, at low temperatures, magnetoresistance increases with increasing carrier density and size disorder. These results are discussed in the light of inter-grain tunneling magnetoresistance. |
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ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2003.09.041 |