Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitax...

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Published inNew journal of physics Vol. 17; no. 5; pp. 053023 - 53030
Main Authors Jiao, L, Liu, H J, Chen, J L, Yi, Y, Chen, W G, Cai, Y, Wang, J N, Dai, X Q, Wang, N, Ho, W K, Xie, M H
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 15.05.2015
Subjects
Defect annealing
domain boundary
Domains
Epitaxial growth
Molecular beam epitaxy
Molybdenum compounds
Monolayers
MoSe2
Optoelectronic devices
Physics
Spintronics
surface nucleation
Transition metal compounds
transition metal dichalcogenides
van der waals epitaxy
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Summary:Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.
ISSN:1367-2630
DOI:10.1088/1367-2630/17/5/053023