Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions

• Published in: Scientific reports Vol. 15; no. 1; pp. 4682 - 7
• Main Authors: Cherik, Iman Chahardah, Mohammadi, Saeed, Hurley, Paul K., Ansari, Lida, Gity, Farzan
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 08.02.2025; Nature Publishing Group; Nature Portfolio
• Subjects: 639/166/987; 639/925/927; Dopingless; Electric fields; Electrostatic properties; Heterojunction; Humanities and Social Sciences; Mathematical models; multidisciplinary; Performance evaluation; Quantum confinement; Science; Science (multidisciplinary); Silicon; Simulation; TFET; Thin films; Transistors; Trap-assisted tunneling; Quantum confinement; Dopingless; Trap-assisted tunneling; TFET; Heterojunction

In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic...