Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions

• Published in: Scientific reports Vol. 15; no. 1; pp. 4682 - 7
• Main Authors: Cherik, Iman Chahardah, Mohammadi, Saeed, Hurley, Paul K., Ansari, Lida, Gity, Farzan
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 08.02.2025; Nature Publishing Group; Nature Portfolio
• Subjects: 639/166/987; 639/925/927; Dopingless; Electric fields; Electrostatic properties; Heterojunction; Humanities and Social Sciences; Mathematical models; multidisciplinary; Performance evaluation; Quantum confinement; Science; Science (multidisciplinary); Silicon; Simulation; TFET; Thin films; Transistors; Trap-assisted tunneling; Quantum confinement; Dopingless; Trap-assisted tunneling; TFET; Heterojunction
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-025-88281-0

In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as I ON = 23.8 µA/µm, SS AVG = 12.03 mV/dec, and the I ON / I OFF ratio = 4.88 × 10 10 indicate that our structure is a promising candidate for high-performance applications.