Topological edge states in single- and multi-layer Bi4Br4

• Published in: New journal of physics Vol. 17; no. 1; pp. 015004 - 15009
• Main Authors: Zhou, Jin-Jian, Feng, Wanxiang, Liu, Gui-Bin, Yao, Yugui
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 09.01.2015
• Subjects: 73.22.-f; 73.43.-f; Electron transport; Energy gap; First principles; first-principles calculations; Insulators; Interlayers; Monolayers; Multilayers; Physics; quantum spin hall insulator; Single crystals; Substrates; topological egde states; Topology; two-dimensional materials
• ISSN: 1367-2630
• DOI: 10.1088/1367-2630/17/1/015004

Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for QSH insulator materials, e.g. a large band gap, appropriate insulating substrates, and multiple conducting channels. In this paper, based on first-principles calculations, we show that Bi4Br4 is a suitable candidate. Single-layer Bi4Br4 was recently demonstrated to be a QSH insulator with sizable gap. Here we find that, in multilayer systems, both the band gaps and low-energy electronic structures are only slightly affected by the interlayer coupling. On the intrinsic insulating substrate of bulk Bi4Br4, the single-layer Bi4Br4 preserves its topological edge states well. Moreover, at the boundary of multilayer Bi4Br4, the topological edge states stemming from different single-layers are weakly coupled, and can be fully decoupled by constructing a stair-stepped edge. The decoupled topological edge states are very suitable for multi-channel dissipationless transport. Our work indicates that an ideal QSH insulator can be prepared by nano-fabricaton on the cleaved surface of layered Bi4Br4 single crystal.