Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier

• Published in: Frontiers of Optoelectronics (Online) Vol. 17; no. 1; p. 16
• Main Authors: Zhou, Chen, He, Xiwen, Xiao, Mingyue, Ma, Deyue, Chen, Weibiao, Zhou, Zhiping
• Format: Journal Article
• Language: English
• Published: Beijing Higher Education Press 04.06.2024; Springer & Higher Education Press
• Subjects: 2 μm band; Biomedical Engineering and Bioengineering; Electrical Engineering; Engineering; Physics; Research Article; Silicon-based optoelectronics; Waveguide amplifier; Wavelength conversion; Silicon-based optoelectronics; Waveguide amplifier; 2 μm band; Wavelength conversion
• ISSN: 2095-2759; 2095-2767
• DOI: 10.1007/s12200-024-00118-2

In current documented studies, it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2 μm band, generally falling below −20.0 dB. To address this issue, we present a novel wavelength conversion device assisted by a waveguide amplifier, incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier, thereby achieving a notable conversion efficiency exceeding 0 dB. The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter, which enables an upsurge in conversion efficiency to −15.54 dB under 100 mW of pump power. Furthermore, the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB. Avoiding the use of external optical amplifiers, this device enables efficient and high-bandwidth wavelength conversion, showing promising applications in various fields, such as optical communication, sensing, imaging, and beyond. Graphical Abstract