Correlative Spatial Mapping of Optoelectronic Properties in Large Area 2D MoS2 Phototransistors

• Published in: Advanced materials interfaces Vol. 10; no. 34
• Main Authors: Ismael, Timothy, Grinalds, Nathan J., Abbas, Muhammad A., Hill, Noah, Luthy, Claire E., Escarra, Matthew D.
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.12.2023; Wiley-VCH
• Subjects: 2D materials; Aluminum oxide; Chemical vapor deposition; Correlation; correlative spatial maps; Mapping; Molybdenum disulfide; Molybdenum trioxide; Morphology; MoS2 film; Optoelectronic devices; optoelectronics; Photoelectric effect; Photoelectric emission; Photoluminescence; Phototransistors; Quantum efficiency; Sapphire; Substrates; Two dimensional materials
• ISSN: 2196-7350; 2196-7350
• DOI: 10.1002/admi.202300455

2D materials‐based device performance is significantly affected by film non‐uniformity, especially for large area devices. Here, it investigates the dependence of large area 2D MoS2 phototransistor performance on film morphology through correlative mapping. Monolayer MoS2 films are quazi‐epitaxially synthesized on C‐plane sapphire (Al2O3 ) substrates by chemical vapor deposition, and the growth time and molybdenum trioxide MoO3 precursor volume are varied to obtain variations in film morphology. Raman, photoluminescence, transmittance, and photocurrent maps are generated and compared with each other to obtain a holistic understanding of large area 2D optoelectronic device performance. For example, it shows that the photoluminescence peak shift and intensity can be used to investigate strain and other defects across multiple film morphologies, giving insight into their effects on the photogenerated current in these devices. It also combines photocurrent and absorption maps to generate large area high‐resolution external quantum efficiency and internal quantum efficiency maps for the devices. This study demonstrates the benefit of correlative mapping in the understanding and advancement of large area 2D material‐based electronic and optoelectronic devices. Large area, 2D MoS2 films and flakes of different morphologies are synthesized by chemical vapor deposition. The dependence of large area 2D MoS2 phototransistor performance on film morphology is shown through the correlation of high‐resolution spatial maps of Raman, photoluminescence, transmittance, photocurrent, and related properties. Such analysis will enable the advancement of scalable 2D material‐based electronics and optoelectronics.