Influence of oxygen partial pressure on SmBa2Cu3O7-δ film deposited by laser chemical vapor deposition

• Published in: Journal of Asian Ceramic Societies Vol. 9; no. 1; pp. 197 - 207
• Main Authors: Wang, Ting, Tu, Rong, Zhang, Canlin, Zhang, Song, Wang, Kaidong, Goto, Takashi, Zhang, Lianmeng
• Format: Journal Article
• Language: English
• Published: Taylor & Francis 02.01.2021; Taylor & Francis Group
• Subjects: 7-δ; laser chemical vapor deposition; oxygen partial pressure; SmBa; smba2cu3o7-δ film; superconducting property
• ISSN: 2187-0764
• DOI: 10.1080/21870764.2020.1860434

Laser chemical vapor deposition (LCVD) was applied to prepare SmBa 2 Cu 3 O 7-δ (SmBCO) superconductive films on single-crystalline LaAlO 3 (100) substrates. The effect of oxygen partial pressure (P O2 ) on the crystal orientation, microstructure, and superconducting property of SmBCO film were investigated thoroughly. The results of X-ray diffraction (XRD) and Raman showed that the crystal orientation of SmBCO film was pure c -axis orientation at the P O2 of 200 Pa, and the a- axis orientation grains gradually emerged in SmBCO film with the increase of P O2 . The deposition rate, critical temperature (T c ), critical current density (J c ) firstly increased and then decreased with the increase of P O2 . At the P O2 of 200 Pa, the SmBCO film had smooth and dense surface, the lowest FWHM of φ-scan (1.1°), the highest T c (89.2 K) and J c (2.04 MA/cm 2 ), which indicated that SmBCO superconductive films possessed excellent crystal structure and superconducting performance.