The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Bi 2 FeCrO 6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors...

Full description

Saved in:
Bibliographic Details
Published inJournal of Asian Ceramic Societies Vol. 9; no. 3; pp. 851 - 857
Main Authors Jiang, Yan-Ping, Zhou, Hang-Lv, Tang, Xin-Gui, Liu, Qiu-Xiang, Li, Wen-Hua, Tang, Zhen-Hua
Format Journal Article
LanguageEnglish
Published Taylor & Francis 03.07.2021
Taylor & Francis Group
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Bi 2 FeCrO 6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two types of the resistive switching behaviors, it is found that the digital resistive behavior conductance mechanism is a bulk-limited conduction, and the analog resistive switching behavior is accompanied with rectification effects and negative differential resistance behaviors, which are considered as interface-limited conductivity behaviors. So the change of digital and analog resistive switching behaviors may be result of the transformation of conductive mechanism. These research results will help us to design and manufacture digital and analog multifunctional resistive switching memory devices.
ISSN:2187-0764
DOI:10.1080/21870764.2021.1920158