Symmetry driven control of optical properties in WO3 films

In this work, we demonstrate that the optical bandgap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. The insertion of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice exp...

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Bibliographic Details
Published inAPL materials Vol. 5; no. 6; pp. 066106 - 066106-7
Main Authors Herklotz, A., Rus, S. F., KC, S., Cooper, V. R., Huon, A., Guo, E.-J., Ward, T. Z.
Format Journal Article
LanguageEnglish
Published United States American Institute of Physics (AIP) 01.06.2017
AIP Publishing LLC
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Summary:In this work, we demonstrate that the optical bandgap of WO3 films can be continuously controlled through uniaxial strain induced by low-energy helium implantation. The insertion of He into epitaxially grown and coherently strained WO3 films can be used to induce single axis out-of-plane lattice expansion of up to 2%. Ellipsometric spectroscopy reveals that the optical bandgap is reduced by about 0.18 eV per percent expansion of the out-of-plane unit cell length. Density functional theory calculations show that this response is a direct result of changes in orbital degeneracy driven by changes in the octahedral rotations and tilts.
Bibliography:USDOE Office of Science (SC)
AC05-00OR22725
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4989395