Modifying the Power and Performance of 2-Dimensional MoS2 Field Effect Transistors

• Published in: Research (Washington) Vol. 6; p. 0057
• Main Authors: Zhuo, Fulin, Wu, Jie, Li, Binhong, Li, Moyang, Tan, Chee Leong, Luo, Zhongzhong, Sun, Huabin, Xu, Yong, Yu, Zhihao
• Format: Journal Article
• Language: English
• Published: AAAS 01.01.2023; American Association for the Advancement of Science (AAAS)
• Subjects: Review
• ISSN: 2639-5274
• DOI: 10.34133/research.0057

Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility ( μ ), equivalent oxide thickness ( EOT ), and contact resistance ( R C ), which enables high ON current ( I on ) with reduced driving voltage ( V dd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.