Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)

Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial relation Cr2AlC(0001) || MgO(111) and Cr2AlC [11-20]...

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Bibliographic Details
Published inMaterials research letters Vol. 9; no. 8; pp. 343 - 349
Main Authors Stevens, Marc, Pazniak, Hanna, Jemiola, Alexander, Felek, Merve, Farle, Michael, Wiedwald, Ulf
Format Journal Article
LanguageEnglish
Published New York Taylor & Francis Ltd 01.08.2021
Taylor & Francis Group
Subjects
Aluminum oxide
columnar growth
electrical resistivity
Epitaxial growth
epitaxial thin films
Magnesium oxide
max phase
Morphology
Percolation
Pulsed laser deposition
Pulsed lasers
Thick films
Thickness
Thin films
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Summary:Epitaxial Cr2AlC MAX phase thin films were grown on MgO(111) and Al2O3(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr2AlC thin films on MgO (111) reveal phase purity, columnar growth, the epitaxial relation Cr2AlC(0001) || MgO(111) and Cr2AlC [11-20] || MgO[10-1] and similar growth behaviour on Al2O3(0001). Resistivity measurements show semiconductor-like behaviour for 10 and 20 nm thick films, and metallic-like behaviour for thicker films, suggesting a percolation thickness slightly above 20 nm. Our results demonstrate the potential of PLD as a novel method for the growth of epitaxial MAX phase thin films.
ISSN:2166-3831
DOI:10.1080/21663831.2021.1920510