Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, wh...

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Published inBulletin of the Polish Academy of Sciences. Technical sciences Vol. 68; no. 4; pp. 845 - 855
Main Authors Rogalski, A, Kopytko, Małgorzata, Martyniuk, Piotr, Hu, W
Format Journal Article
LanguageEnglish
Published Warsaw Polish Academy of Sciences 01.08.2020
Subjects
blip performance
colloidal quantum dot infrared photodetectors
Dark current
Depletion
Focal plane devices
Global marketing
hgcdte photodiodes
hot infrared detectors
Infrared detectors
Mercury cadmium tellurides
Operating temperature
p-i-n depleted photodiodes
Photodiodes
Photometers
Quantum chromodynamics
Quantum dots
Room temperature
Sensors
Superlattices
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Summary:In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
ISSN:0239-7528
2300-1917
DOI:10.24425/bpasts.2020.134174