Improving the acousto‐optical interaction by an introduction of a planarisation SiO2 layer

• Published in: Electronics letters Vol. 57; no. 5; pp. 223 - 225
• Main Authors: Wang, Rongwei, Fan, Guofang, Zhang, Zeping, Jing, Yachao, Wang, Muguang, Cai, Xiaoyu, Wei, Jiasi, Li, Hongyu, Li, Yuan
• Format: Journal Article
• Language: English
• Published: Stevenage John Wiley & Sons, Inc 01.03.2021; Wiley
• Subjects: Acoustics; Acousto-optical devices; Chemical-mechanical polishing; Configurations; Electric fields; Integrated optics; Optical waveguides; Optical waveguides and couplers; Optics; Propagation; Silicon; Silicon dioxide; Simulation; Sonic and ultrasonic transducers and sensors; Zinc oxide
• ISSN: 0013-5194; 1350-911X
• DOI: 10.1049/ell2.12013

This paper introduces a planarisation SiO2 layer into the configuration of ZnO‐silicon‐on‐insulator for constructing an acoustical resonant cavity to enhance the acoustic density on a silicon‐on‐insulator waveguide. The improved configuration with a planarisation SiO2 layer can increase the acousto‐optical interaction by about three times and 20% compared with acousto‐optical configuration of ZnO pads only in an interdigital transducer region and all over a silicon on insulator. Moreover, an introduction of a planarisation SiO2 layer can reduce acoustic reflection on optical waveguide and optical waveguide loss for an acousto‐optical device on silicon‐on‐insulator optical waveguides.