Performance and Scalability of Strain Engineered 2D MoTe2 Phase-Change Memristors

• Published in: IEEE journal of the Electron Devices Society Vol. 13; pp. 343 - 349
• Main Authors: Guimaraes Leal, Maria Vitoria, Azizimanesh, Ahmad, Hasan, Nazmul, Wu, Stephen M.
• Format: Journal Article
• Language: English
• Published: IEEE 2025
• Subjects: device fabrication; Force; Geometry; Memristor; Memristors; Metals; Optical switches; Performance evaluation; phase-change memory; Strain; strain engineering; Stress; Substrates; two-dimensional materials; Voltage

This work presents a performance optimization and scalability study of a two-dimensional vertical molybdenum ditelluride (MoTe2) phase-change memristor. The device switches between the semimetallic (1T') and semiconducting (2H) states under an electric field. Process-induced strain engineering...