Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells
This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of sh...
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Published in | EPJ Photovoltaics Vol. 14; p. 22 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
EDP Sciences
2023
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Subjects | |
Online Access | Get full text |
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Summary: | This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlOx annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5%abs and 2.6%abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles. |
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ISSN: | 2105-0716 |
DOI: | 10.1051/epjpv/2023013 |