Edge passivation of shingled poly-Si/SiOx passivated contacts solar cells

This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of sh...

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Bibliographic Details
Published inEPJ Photovoltaics Vol. 14; p. 22
Main Authors Dhainaut, Franck, Dabadie, Raoul, Martel, Benoit, Desrues, Thibaut, Albaric, Mickaël, Palais, Olivier, Dubois, Sébastien, Harrison, Samuel
Format Journal Article
LanguageEnglish
Published EDP Sciences 2023
Subjects
alox
edge passivation
high temperature
passivated contacts
Physics
shingle solar cell
passivated contacts
Shingle solar cell
AlOx
edge passivation
high temperature
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Summary:This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiOx passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlOx) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlOx annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5%abs and 2.6%abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles.
ISSN:2105-0716
DOI:10.1051/epjpv/2023013