WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

• Published in: IEEE journal of the Electron Devices Society Vol. 9; pp. 1117 - 1124
• Main Authors: Hamada, Takuya, Hamada, Masaya, Igarashi, Satoshi, Horiguchi, Taiga, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Tatsumi, Tetsuya, Tomiya, Shigetaka, Wakabayashi, Hitoshi
• Format: Journal Article
• Language: English
• Published: IEEE 2021
• Subjects: <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p MISFET; MISFETs; Radio frequency; radio-frequency (RF) magnetron sputtering; Silicon; Sputtering; Sulfur; sulfur-vapor annealing (SVA); TiN contact; TiN top gate; Titanium nitride; Tungsten; Tungsten disulfide (WS₂); ultra-high vacuum (UHV); ultra-thin body and box (UTBB)
• ISSN: 2168-6734
• DOI: 10.1109/JEDS.2021.3108882

A layered polycrystalline WS 2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its <inline-formula> <tex-math notation="LaTeX">p </tex-math></inline-formula>MISFET is successfully demonstrated with TiN/HfO 2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS 2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. <inline-formula> <tex-math notation="LaTeX">I </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">V </tex-math></inline-formula> characteristics with <inline-formula> <tex-math notation="LaTeX">p </tex-math></inline-formula>-type operation are confirmed in WS 2 MISFETs with a maximum field effect mobility of <inline-formula> <tex-math notation="LaTeX">1.5\times10 </tex-math></inline-formula> −2 cm 2 V −1 s −1 . Therefore, our film-formation method is a promising candidate for <inline-formula> <tex-math notation="LaTeX">p </tex-math></inline-formula>MOSFETs in CMOS circuits.