Dielectric relaxation and AC conductivity studies of Se90Cd10−xInx glassy alloys

•Dielectric properties of Se90Cd10−xInx are measured as a function of frequency.•Dielectric constant and dielectric loss show frequency dispersion at low frequencies.•AC conductivity of Se–Cd–In glassy alloys increases with increase in frequency while it decreases with increase of In content in Se–C...

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Bibliographic Details
Published inJournal of Asian Ceramic Societies Vol. 4; no. 2; pp. 178 - 184
Main Authors Shukla, Nitesh, Dwivedi, D.K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2016
Taylor & Francis Group
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Summary:•Dielectric properties of Se90Cd10−xInx are measured as a function of frequency.•Dielectric constant and dielectric loss show frequency dispersion at low frequencies.•AC conductivity of Se–Cd–In glassy alloys increases with increase in frequency while it decreases with increase of In content in Se–Cd matrix.•These materials can be a good choice as nonlinear optical materials in optical devices. Chalcogenide glassy alloys of Se90Cd10−xInx (x=2, 4, 6, 8) are synthesized by melt quench technique. The prepared glassy alloys have been characterized by techniques such as differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and energy dispersive X-ray (EDAX). Dielectric properties of Se90Cd10−xInx (x=2, 4, 6, 8) chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42Hz to 5MHz at room temperature. It is found that the dielectric constants ɛ′, dielectric loss factor ɛ″ and loss angle Tanδ depend on frequency. ɛ′, ɛ″ and loss angle Tanδ are found to be decreasing with the In content in Se90Cd10−xInx glassy system. AC conductivity of the prepared sample has also been studied. It is found that AC conductivity increases with frequency where as it has decreasing trend with increasing In content in Se–Cd matrix. The semicircles observed in the Cole–Cole plots indicate a single relaxation process.
ISSN:2187-0764
2187-0764
DOI:10.1016/j.jascer.2016.02.003