Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific...

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Published inAdvances in electrical and electronic engineering Vol. 4; no. 2; pp. 79 - 82
Main Authors Vincze, Andrej, Michalka, Miroslav, Bruncko, Jaroslav, Uherek, Frantisek
Format Journal Article
LanguageEnglish
Published Ostrava Faculty of Electrical Engineering and Computer Science VSB - Technical University of Ostrava 01.06.2005
VSB-Technical University of Ostrava
Subjects
material
microscopy
semiconductor
zno
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Summary:New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD) is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM).
ISSN:1336-1376
1804-3119