Ofstatistical and Fractal Properties of Semiconductor Surface Roughness

Surface morphology evolution is of primary significance for the thin-film growth and modification of surface andinterface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductorstructure. Statistical and fractal properties of semiconduc...

Full description

Saved in:
Bibliographic Details
Published inAdvances in electrical and electronic engineering Vol. 7; no. 1-2; pp. 377 - 381
Main Authors Jurecka, Stanislav, Jureckova, Maria, Kobayashi, Hikaru, Takahashi, Masao, Madani, Mohammad, Pincik, Emil
Format Journal Article
LanguageEnglish
Published Ostrava Faculty of Electrical Engineering and Computer Science VSB - Technical University of Ostrava 01.03.2008
VSB-Technical University of Ostrava
Subjects
afm
semiconductor surface
sic
Online AccessGet full text

Cover

More Information
Summary:Surface morphology evolution is of primary significance for the thin-film growth and modification of surface andinterface states. Surface and interface states substantially influence the electrical and optical properties of the semiconductorstructure. Statistical and fractal properties of semiconductor rough surfaces were determined by analysis of the AFM images.In this paper statistical characteristics of the AFM height function distribution, fractal dimension, lacunarity and granulometric density values are used for the surface morphology of the SiC samples description. The results can be used for solution ofthe microstructural and optical properties of given semiconductor structure.
ISSN:1336-1376
1804-3119