UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal...

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Bibliographic Details
Published inProceedings Vol. 2; no. 13; p. 999
Main Authors Manuel Bastuck, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, Mike Andersson
Format Journal Article
LanguageEnglish
Published MDPI AG 01.12.2018
Subjects
dynamic operation
gas sensors
gate bias cycled operation
linear discriminant analysis
SiC-FET
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Summary:Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.
ISSN:2504-3900
DOI:10.3390/proceedings2130999