Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures

The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation...

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Bibliographic Details
Published inYuanzineng kexue jishu Vol. 57; no. 12; pp. 2288 - 2294
Main Author FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3
Format Journal Article
LanguageEnglish
Published Editorial Board of Atomic Energy Science and Technology 01.12.2023
Subjects
electron irradiation
inp-based hemt
strain channel
two-dimensional electron gas
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Summary:The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs. The effect of InxGa1-xAs channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated. The experiment results show that, after the same high electron irradiation dose, the 2DEG mobility and density in InP-based HEMT structures with strain InxGa1-xAs (x＞0.53) channel decrease more dramatically than that without strain In0.53Ga0.47As channel. Moreover, the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the InxGa1-xAs channel. The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.
ISSN:1000-6931
DOI:10.7538/yzk.2023.youxian.0701