Tunable electrical properties of multilayer HfSe 2 field effect transistors by oxygen plasma treatment

HfSe field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe field effect transistors showed a high on/off ratio improvement of four orders of magnitude,...

Full description

Saved in:
Bibliographic Details
Published inNanoscale Vol. 9; no. 4; pp. 1645 - 1652
Main Authors Kang, Moonshik, Rathi, Servin, Lee, Inyeal, Li, Lijun, Khan, Muhammad Atif, Lim, Dongsuk, Lee, Yoontae, Park, Jinwoo, Yun, Sun Jin, Youn, Doo-Hyeb, Jun, Chungsam, Kim, Gil-Ho
Format Journal Article
LanguageEnglish
Published England 26.01.2017
Online AccessGet full text

Cover

More Information
Summary:HfSe field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 10 , a field effect mobility increase from 2.16 to 3.04 cm V s , a subthreshold swing improvement from 30.6 to 4.8 V dec , and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
ISSN:2040-3364
2040-3372
DOI:10.1039/C6NR08467B