Enhancement in threshold voltage with thickness in memory switch fabricated using GeSe 1.5 S 0.5 thin films

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 615; pp. 629 - 635
Main Authors Ananth Kumar, R.T., Das, Chandasree, Chithra Lekha, P., Asokan, S., Sanjeeviraja, C., Pathinettam Padiyan, D.
Format Journal Article
LanguageEnglish
Published 01.12.2014
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ISSN:0925-8388
DOI:10.1016/j.jallcom.2014.07.068