Dislocation interaction of layers in the Ge/Ge-seed/Ge Si1−/Si(0 0 1) (x∼ 0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

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Bibliographic Details
Published in	Acta materialia Vol. 61; no. 14; pp. 5400 - 5405
Main Authors	Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V., Vasilenko, A.P.
Format	Journal Article
Language	English
Published	01.08.2013
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ISSN:	1359-6454
DOI:	10.1016/j.actamat.2013.05.028