Comparison of interfacial and electrical properties between Al 2 O 3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 3; p. 34006
Main Authors Zhu, Shuyan, Xu, Jingping, Wang, Lisheng, Huang, Yuan, Tang, Wing Man
Format Journal Article
LanguageEnglish
Published 01.03.2015
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/3/034006