An Al 0.25 Ga 0.75 N/GaN Lateral Field Emission Device with a Nano Void Channel
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Published in | Chinese physics letters Vol. 35; no. 3; p. 38103 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.03.2018
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Online Access | Get full text |
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ISSN: | 0256-307X 1741-3540 |
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DOI: | 10.1088/0256-307X/35/3/038103 |