Characterization of Ge Doping on Sb 2 Te 3 for High-Speed Phase Change Memory Application

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Published inChinese physics letters Vol. 32; no. 7; p. 77302
Main Authors Zhu, Yue-Qin, Zhang, Zhong-Hua, Song, San-Nian, Xie, Hua-Qing, Song, Zhi-Tang, Shen, Lan-Lan, Li, Le, Wu, Liang-Cai, Liu, Bo
Format Journal Article
LanguageEnglish
Published 01.07.2015
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Author Xie, Hua-Qing
Liu, Bo
Li, Le
Shen, Lan-Lan
Wu, Liang-Cai
Zhu, Yue-Qin
Zhang, Zhong-Hua
Song, San-Nian
Song, Zhi-Tang
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Title Characterization of Ge Doping on Sb 2 Te 3 for High-Speed Phase Change Memory Application
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