Characterization of Ge Doping on Sb 2 Te 3 for High-Speed Phase Change Memory Application
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Published in | Chinese physics letters Vol. 32; no. 7; p. 77302 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2015
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Online Access | Get full text |
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ISSN: | 0256-307X 1741-3540 |
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DOI: | 10.1088/0256-307X/32/7/077302 |