0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mit...

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Bibliographic Details
Published in中国物理B：英文版 no. 2; pp. 385 - 388
Main Author 季莲 陆书龙 江德生 赵勇明 谭明 朱亚棋 董建荣
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
InP衬底
光电器件
成分
晶格失配
能隙
起伏
金属有机物化学气相沉积
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Summary:Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global（AM 1.5 G）.
Bibliography:Ji Lian LU Shu-Long, Jiang De-Sheng , Zhao Yong-Ming , Tan Ming , Zhu Ya-Qi , Dong Jian-Rong（1）Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China ;2） State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P O Box 912, Beijing 100083, China
Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ～1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global（AM 1.5 G）.
In0.69Ga0.39As,thermophotovoltaic devices,InAsyP1-y buffer
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/22/2/026802