Optical Characterization of Semiconducting Thin Films Using UV-VIS-NIR Spectroscopy: A Review

The review article focuses on the growth of thin film and its characterization by UV-Vis-NIR spectroscopy. For UV-Vis-NIR spectroscopy of thin films, they are usually deposited on translucent quartz glass surfaces. The article reports the extraction of various thin film optical parameters viz., abso...

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Published inSolid state phenomena Vol. 350; pp. 115 - 124
Main Authors Dhruv, S.D., Solanki, Pankaj, Dhruv, D.K., Vala, Mayur, Sharko, Sergei A., Thakker, I.T., Kataria, Bharat
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 06.10.2023
Subjects
Absorptivity
Dissipation factor
Optical properties
Parameters
Refractivity
Silica glass
Spectroscopy
Substrates
Thickness
Thin films
Optical Band Gap
Optical Conductivity
UV-VIS-NIR Spectroscopy
Semiconducting Thin Film
Refractive Index
Extinction Coefficient
Dielectric Constants
Absorption Coefficient
Dissipation Factor
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Summary:The review article focuses on the growth of thin film and its characterization by UV-Vis-NIR spectroscopy. For UV-Vis-NIR spectroscopy of thin films, they are usually deposited on translucent quartz glass surfaces. The article reports the extraction of various thin film optical parameters viz., absorption coefficient (α), Urbach energy (Eu), optical band gap (Eg), refractive index (n), extinction coefficient (k), dielectric constants, dissipation factor (tanδ) and optical conductivity (σoptical) by using optical spectra (absorption(A)/transmittance (T)/reflectance (R)). Furthermore, the effect of thin film substrate temperature (Ts) and/or thickness (d) and/or post-deposition annealing temperature (Ta) on various optical parameters is discussed in detail.
Bibliography:Special topic volume with invited peer-reviewed papers only
ISSN:1012-0394
1662-9779
1662-9779
DOI:10.4028/p-YADdi5