Corrigendum to’ X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)’. Materials science in semiconductor processing 119 (2020) 105,262

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Published inMaterials science in semiconductor processing Vol. 122; p. 105544
Main Authors Meyer, Kevin, Buchholz, Martin, Uxa, Daniel, Dörrer, Lars, Schmidt, Harald, Schaadt, Daniel M.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2021
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ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2020.105544