Corrigendum to’ X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)’. Materials science in semiconductor processing 119 (2020) 105,262
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Published in | Materials science in semiconductor processing Vol. 122; p. 105544 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.02.2021
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Online Access | Get full text |
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Bibliography: | erratum |
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ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2020.105544 |