Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N 2 O Doping

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Bibliographic Details
Published inChinese physics letters Vol. 25; no. 12; pp. 4345 - 4347
Main Authors Jing-Chang, Sun, Hong-Wei, Liang, Jian-Ze, Zhao, Ji-Ming, Bian, Qiu-Ju, Feng, Jing-Wei, Wang, Zi-Wen, Zhao, Guo-Tong, Du
Format Journal Article
LanguageEnglish
Published 01.12.2008
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/25/12/045