Silicon carbide electroluminescent diodes and arrays with external quantum efficiency

Certain progress has been made recently in the development of SiC electroluminescent diodes capable of operating in the visible region of the spectrum. This correspondence summarises the results obtained in the course of the development of similar diodes in the USSR.

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 4; no. 6; pp. 421 - 422
Main Authors Vasenkov, A.A., Kruglov, I.I., Pavlichenko, V.I., Ryzhikov, I.V., Sushkov, V.P.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1969
Subjects
Electroluminescence
Luminescence
Microwave devices
P-i-n diodes
Power semiconductor switches
Radar
Semiconductor devices
Semiconductor diodes
Semiconductor impurities
Silicon carbide
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Summary:Certain progress has been made recently in the development of SiC electroluminescent diodes capable of operating in the visible region of the spectrum. This correspondence summarises the results obtained in the course of the development of similar diodes in the USSR.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1969.1050048