How to include the dependency of the R/sub DS(on/) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in t...
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Published in | IEEE transactions on industrial electronics (1982) Vol. 45; no. 3; pp. 369 - 375 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.06.1998
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors. |
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ISSN: | 0278-0046 1557-9948 |
DOI: | 10.1109/41.678994 |