High-quality In 0.3 Ga 0.7 N/GaN quantum well growth and their optical and structural properties

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Bibliographic Details
Published inSemiconductor science and technology Vol. 16; no. 9; pp. 783 - 788
Main Authors Cheong, Myung Goo, Suh, E-K, Lee, H J
Format Journal Article
LanguageEnglish
Published 01.09.2001
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/16/9/308