Non-trivial GR and 1/ f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO 2 interface

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Bibliographic Details
Published inSemiconductor science and technology Vol. 14; no. 9; pp. 775 - 783
Main Authors Lukyanchikova, N B, Petrichuk, M V, Garbar, N P, Simoen, E, Claeys, C
Format Journal Article
LanguageEnglish
Published 01.09.1999
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/14/9/306