Monte Carlo simulation of electron heating in a one-dimensional GaAs-quantum conductor

The process of transport of one-dimensional electrons in a GaAs quantum conductor is investigated by the Monte Carlo method. It is shown that in addition to scattering by polar optical phonons, the heating of charge carriers is also appreciably affected, in the case of electric field intensities hig...

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Published inJournal of engineering physics and thermophysics Vol. 70; no. 2; pp. 224 - 227
Main Authors BORZDOV, V. M, ZHEVNYAK, O. G, KOMAROV, F. F, KHOMICH, A. V
Format Journal Article
LanguageEnglish
Published New York, NY Consultants Bureau 01.03.1997
Springer Nature B.V
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Heating
Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Monte Carlo simulation
Physics
Studies
Gallium arsenides
Monte Carlo methods
Inorganic compounds
Electron temperature
Simulation
Electric field effects
Theoretical study
Electron-phonon interactions
Drift velocity
Electron-impurity interactions
One-dimensional systems
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Summary:The process of transport of one-dimensional electrons in a GaAs quantum conductor is investigated by the Monte Carlo method. It is shown that in addition to scattering by polar optical phonons, the heating of charge carriers is also appreciably affected, in the case of electric field intensities higher than 5.10^sup 5^V/m, by ionized-impurity scattering and the transverse dimensions of the conductor.[PUBLICATION ABSTRACT]
ISSN:1062-0125
1573-871X
DOI:10.1007/BF02660689