A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line

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Bibliographic Details
Published inMicroelectronics Vol. 51; pp. 89 - 98
Main Authors Wu, Shang-Lin, Lu, Chien-Yu, Tu, Ming-Hsien, Huang, Huan-Shun, Lee, Kuen-Di, Kao, Yung-Shin, Chuang, Ching-Te
Format Journal Article
LanguageEnglish
Published 01.05.2016
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ISSN:1879-2391
DOI:10.1016/j.mejo.2016.02.011