Performance Analysis of Inductive Source Degeneration Low Noise Amplifier using Multi-finger Technique

In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split...

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Bibliographic Details
Published inInternational journal of innovative technology and exploring engineering Vol. 8; no. 9; pp. 1636 - 1642
Main Authors M S, Kusuma, Shanthala, Dr. S, Raj P, Dr. Cyril Prasanna
Format Journal Article
LanguageEnglish
Published 30.07.2019
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Summary:In the current paper, common source Low Noise Amplifier using inductively degenerated technique is designed to meet Radio Frequency (RF) range 2.45 GHz-2.85 GHz. The designed LNA is implemented using single and multi-finger transistor logic. The transistor geometry greater than 300 μm has been split into multiple fingers using multi-finger technology. The schematic is captured using ADS. The performance of LNA for various technologies has been analyzed using PTM 180 nm, PTM 130 nm and PTM 90 nm models. The amplifier with single transistor achieves minimum noise figure of 0.178 dB noise figure and maximum gain of 20.045 dB using 130 nm model technology for Bluetooth applications. Similarly 0.288 dB of minimum noise figure and peak gain of 17.971 dB are obtained using multi-finger MOSFET of PTM 90 nm technologyrespectively.The reverse isolation (S12) below -50 dB is achieved.
ISSN:2278-3075
2278-3075
DOI:10.35940/ijitee.I8473.078919