I-4 elastically enhanced nonradiative recombination in AlGaAs-GaAs double heterostructure laser material

Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 22; no. 11; pp. 1054 - 1055
Main Authors Johnston, W.D., Logan, R.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1975
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Summary:Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1975.18272