Influence of traps on diodes

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 11; no. 11; p. 533
Main Authors Lubart, N.D., Hegedus, C.L.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1964
Subjects
Capacitance
Gallium arsenide
Gold
Junctions
P-i-n diodes
Tunneling
Voltage
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Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1964.15406