Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment
Saved in:
Published in | Journal of computational electronics Vol. 15; no. 3; pp. 795 - 800 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.09.2016
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!