Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment

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Bibliographic Details
Published inJournal of computational electronics Vol. 15; no. 3; pp. 795 - 800
Main Authors Biswas, Debaleen, Chakraborty, Ayan, Chakraborty, Supratic
Format Journal Article
LanguageEnglish
Published 01.09.2016
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ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-016-0829-y