Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment

Saved in:
Bibliographic Details
Published inJournal of computational electronics Vol. 15; no. 3; pp. 795 - 800
Main Authors Biswas, Debaleen, Chakraborty, Ayan, Chakraborty, Supratic
Format Journal Article
LanguageEnglish
Published 01.09.2016
Online AccessGet full text

Cover

Author Biswas, Debaleen
Chakraborty, Ayan
Chakraborty, Supratic
Author_xml – sequence: 1
  givenname: Debaleen
  surname: Biswas
  fullname: Biswas, Debaleen
– sequence: 2
  givenname: Ayan
  surname: Chakraborty
  fullname: Chakraborty, Ayan
– sequence: 3
  givenname: Supratic
  surname: Chakraborty
  fullname: Chakraborty, Supratic
BookMark eNotkMtOwzAQRS1UJNrCB7DzoluDH0kTs0MVL6moEmWJFE3jcWNInShOUbPnq_gIvomEspojzZ250pmQka88EnIp-JXgPLkOgqcyZlzMWQ-adSdkLOJEslSoZDTwXLOUy_iMTEJ451xyGYkx-XqpSqSVpeA9Qun8lra4q7GBdt8gdZ62Rb8_OIM0L6DZIjUutI3b7FtX-SFQuG3B6Gz29gF1DT3Qn2_KNhDQ0OfVmhr8dDmGGxrcbl_C3xl4Q_HQ17gd-vacnFooA178zylZ39-9Lh7ZcvXwtLhdslzzjslYaG615omNMIpVGllQiZEbCQDa2hikUQlaqzgomUdc2LmFPFY5GJ0kakrE8WveVCE0aLO6r4emywTPBonZUWLWS8wGiVmnfgH08Wlh
CitedBy_id crossref_primary_10_1109_ACCESS_2022_3183593
Cites_doi 10.1142/S2010135X14500234
10.1109/16.887022
10.1063/1.1425438
10.1116/1.4929442
10.1063/1.4896157
10.1109/16.930653
10.1116/1.1318719
10.1109/T-ED.1975.18267
10.1063/1.1663887
10.1007/978-3-662-09432-7_6
10.1109/16.658688
10.1149/2.001206esl
10.1016/0038-1101(83)90030-8
10.1002/pssa.2210790212
10.1063/1.2717607
10.1016/0038-1101(69)90014-8
10.1016/j.solidstatesciences.2012.09.010
10.1109/TED.2012.2212903
10.1103/PhysRevLett.98.196101
10.1088/1674-1056/22/1/017301
10.1109/T-ED.1983.21207
10.1016/S0022-3093(03)00205-9
10.1063/1.1657043
10.1109/16.830988
10.1063/1.365364
10.1016/j.tsf.2005.09.123
10.1109/16.822296
10.1007/s10825-006-0077-7
10.1109/43.9186
10.1063/1.1517407
10.1109/TED.2011.2159306
10.1016/0038-1101(80)90064-7
10.1002/j.1538-7305.1967.tb01727.x
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1007/s10825-016-0829-y
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1572-8137
EndPage 800
ExternalDocumentID 10_1007_s10825_016_0829_y
GroupedDBID -5B
-5G
-BR
-EM
-Y2
-~C
.86
.VR
06D
0R~
0VY
1N0
203
29K
29~
2J2
2JN
2JY
2KG
2KM
2LR
2P1
2VQ
2~H
30V
4.4
406
408
409
40D
40E
5GY
5VS
67Z
6NX
8TC
8UJ
95-
95.
95~
96X
AAAVM
AABHQ
AACDK
AAHNG
AAIAL
AAJBT
AAJKR
AANZL
AARHV
AARTL
AASML
AATNV
AATVU
AAUYE
AAWCG
AAYIU
AAYQN
AAYTO
AAYXX
ABAKF
ABBBX
ABBXA
ABDZT
ABECU
ABFTD
ABFTV
ABHLI
ABHQN
ABJCF
ABJNI
ABJOX
ABKCH
ABKTR
ABMNI
ABMQK
ABNWP
ABQBU
ABSXP
ABTEG
ABTHY
ABTKH
ABTMW
ABULA
ABWNU
ABXPI
ACAOD
ACBXY
ACDTI
ACGFS
ACHSB
ACHXU
ACIPQ
ACKNC
ACMDZ
ACMLO
ACOKC
ACOMO
ACSNA
ACZOJ
ADHHG
ADHIR
ADINQ
ADKNI
ADKPE
ADRFC
ADTPH
ADURQ
ADYFF
ADZKW
AEBTG
AEFQL
AEGAL
AEGNC
AEJHL
AEJRE
AEKMD
AEMSY
AENEX
AEOHA
AEPYU
AESKC
AETLH
AEVLU
AEXYK
AFBBN
AFGCZ
AFKRA
AFLOW
AFQWF
AFWTZ
AFZKB
AGAYW
AGDGC
AGJBK
AGMZJ
AGQEE
AGQMX
AGRTI
AGWIL
AGWZB
AGYKE
AHAVH
AHBYD
AHKAY
AHSBF
AHYZX
AIAKS
AIGIU
AIIXL
AILAN
AITGF
AJBLW
AJRNO
AJZVZ
ALMA_UNASSIGNED_HOLDINGS
ALWAN
AMKLP
AMXSW
AMYLF
AMYQR
AOCGG
ARAPS
ARMRJ
ASPBG
AVWKF
AXYYD
AYJHY
AZFZN
B-.
BA0
BDATZ
BENPR
BGLVJ
BGNMA
CAG
CCPQU
CITATION
COF
CS3
CSCUP
D-I
DDRTE
DL5
DNIVK
DPUIP
EBLON
EBS
EIOEI
EJD
ESBYG
F5P
FEDTE
FERAY
FFXSO
FIGPU
FINBP
FNLPD
FRRFC
FSGXE
FWDCC
GGCAI
GGRSB
GJIRD
GNWQR
GQ6
GQ7
GQ8
GXS
H13
HCIFZ
HF~
HG5
HG6
HLICF
HMJXF
HQYDN
HRMNR
HVGLF
HZ~
I09
IHE
IJ-
IKXTQ
IWAJR
IXC
IXD
IXE
IZIGR
IZQ
I~X
I~Z
J-C
J0Z
JBSCW
JCJTX
JZLTJ
K7-
KDC
KOV
LAK
LLZTM
M4Y
M7S
MA-
N2Q
NB0
NPVJJ
NQJWS
NU0
O9-
O93
O9J
OAM
OVD
P9P
PF0
PT4
PTHSS
QOS
R89
R9I
RNI
RNS
ROL
RPX
RSV
RZC
RZE
S16
S1Z
S27
S3B
SAP
SDH
SEG
SHX
SISQX
SJYHP
SNE
SNPRN
SNX
SOHCF
SOJ
SPISZ
SRMVM
SSLCW
STPWE
SZN
T13
TEORI
TSG
TSK
TSV
TUC
U2A
UG4
UOJIU
UTJUX
UZXMN
VC2
VFIZW
W23
W48
WK8
YLTOR
Z45
Z7R
Z7X
Z83
Z88
ZMTXR
~A9
ID FETCH-LOGICAL-c90y-25190f9907f4e45384fa37d2b2aaa9ff5a2d37eff30a32c401f6fac53cad9773
ISSN 1569-8025
IngestDate Thu Sep 12 18:36:06 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 3
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c90y-25190f9907f4e45384fa37d2b2aaa9ff5a2d37eff30a32c401f6fac53cad9773
PageCount 6
ParticipantIDs crossref_primary_10_1007_s10825_016_0829_y
PublicationCentury 2000
PublicationDate 2016-9-00
PublicationDateYYYYMMDD 2016-09-01
PublicationDate_xml – month: 09
  year: 2016
  text: 2016-9-00
PublicationDecade 2010
PublicationTitle Journal of computational electronics
PublicationYear 2016
References S Guha (829_CR26) 2007; 98
MJ McNutt (829_CR2) 1974; 45
H Bo (829_CR5) 2013; 22
WK Chim (829_CR8) 2002; 91
A Ghetti (829_CR28) 2000; 47
C-H Dai (829_CR3) 2012; 15
C Canali (829_CR21) 1975; 22
AG Khairnar (829_CR4) 2013; 15
EH Oulachgar (829_CR15) 2007; 101
J Maserjian (829_CR32) 1974; 11
B Lee (829_CR13) 2011; 58
C Lombardi (829_CR23) 1988; 7
A Ghetti (829_CR29) 2004; 72
C Chakraborty (829_CR22) 2014; 4
829_CR19
EH Nicollian (829_CR18) 1967; XLVI
D Biswas (829_CR25) 2015; 33
JR Brews (829_CR17) 1983; 26
W-C Lee (829_CR31) 2001; 48
JM Howard (829_CR11) 2002; 81
C Chen (829_CR9) 1998; 45
829_CR33
HJ Quah (829_CR12) 2012; 59
M Lenzlinger (829_CR30) 1969; 40
G Masetti (829_CR20) 1983; 30
A Schenk (829_CR34) 1997; 81
WK Chim (829_CR7) 2000; 47
W-K Chim (829_CR36) 2000; 47
H Satake (829_CR37) 2000; 47
DK Schroder (829_CR24) 2015
D Biswas (829_CR10) 2014; 105
WA Hill (829_CR14) 1979; 23
EH Nicollian (829_CR16) 1968; 12
F Fenske (829_CR1) 1983; 79
M Karner (829_CR35) 2007; 6
J-L Autran (829_CR6) 2003; 322
H Wong (829_CR27) 2006; 504
References_xml – volume: 4
  start-page: 1450023
  year: 2014
  ident: 829_CR22
  publication-title: J. Adv. Dielectr.
  doi: 10.1142/S2010135X14500234
  contributor:
    fullname: C Chakraborty
– ident: 829_CR19
– volume: 47
  start-page: 2358
  year: 2000
  ident: 829_CR28
  publication-title: IEEE Tarns. Electron Devices
  doi: 10.1109/16.887022
  contributor:
    fullname: A Ghetti
– volume: 91
  start-page: 1304
  year: 2002
  ident: 829_CR8
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1425438
  contributor:
    fullname: WK Chim
– volume: 33
  start-page: 052205
  year: 2015
  ident: 829_CR25
  publication-title: J. Vac. Sci. Technol. B
  doi: 10.1116/1.4929442
  contributor:
    fullname: D Biswas
– volume: 105
  start-page: 113511
  year: 2014
  ident: 829_CR10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4896157
  contributor:
    fullname: D Biswas
– volume: 48
  start-page: 1366
  year: 2001
  ident: 829_CR31
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.930653
  contributor:
    fullname: W-C Lee
– volume: 11
  start-page: 996
  year: 1974
  ident: 829_CR32
  publication-title: J. Vac. Sci. Technol.
  doi: 10.1116/1.1318719
  contributor:
    fullname: J Maserjian
– volume: 22
  start-page: 1045
  year: 1975
  ident: 829_CR21
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/T-ED.1975.18267
  contributor:
    fullname: C Canali
– volume: 45
  start-page: 3916
  year: 1974
  ident: 829_CR2
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1663887
  contributor:
    fullname: MJ McNutt
– volume: 72
  start-page: 201
  year: 2004
  ident: 829_CR29
  publication-title: Springer Ser. Mater. Sci.
  doi: 10.1007/978-3-662-09432-7_6
  contributor:
    fullname: A Ghetti
– volume: 45
  start-page: 512
  year: 1998
  ident: 829_CR9
  publication-title: IEEE Trans. Electron. Devices
  doi: 10.1109/16.658688
  contributor:
    fullname: C Chen
– volume: 15
  start-page: H211
  year: 2012
  ident: 829_CR3
  publication-title: Electrochem. Solid-State Lett.
  doi: 10.1149/2.001206esl
  contributor:
    fullname: C-H Dai
– volume: 26
  start-page: 711
  year: 1983
  ident: 829_CR17
  publication-title: Solid-State Electron
  doi: 10.1016/0038-1101(83)90030-8
  contributor:
    fullname: JR Brews
– volume: 79
  start-page: 417
  year: 1983
  ident: 829_CR1
  publication-title: Phys. Stat. Sol. A
  doi: 10.1002/pssa.2210790212
  contributor:
    fullname: F Fenske
– volume: 101
  start-page: 084107
  year: 2007
  ident: 829_CR15
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2717607
  contributor:
    fullname: EH Oulachgar
– volume: 12
  start-page: 937
  year: 1968
  ident: 829_CR16
  publication-title: Solid-State Electron
  doi: 10.1016/0038-1101(69)90014-8
  contributor:
    fullname: EH Nicollian
– volume: 15
  start-page: 24
  year: 2013
  ident: 829_CR4
  publication-title: Solid State Sci.
  doi: 10.1016/j.solidstatesciences.2012.09.010
  contributor:
    fullname: AG Khairnar
– volume: 59
  start-page: 3009
  year: 2012
  ident: 829_CR12
  publication-title: IEEE Trans. Electron Device
  doi: 10.1109/TED.2012.2212903
  contributor:
    fullname: HJ Quah
– volume-title: Semiconductor Material and Device Characterization
  year: 2015
  ident: 829_CR24
  contributor:
    fullname: DK Schroder
– volume: 98
  start-page: 196101
  year: 2007
  ident: 829_CR26
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.98.196101
  contributor:
    fullname: S Guha
– volume: 22
  start-page: 017301
  year: 2013
  ident: 829_CR5
  publication-title: Chin. Phys. B
  doi: 10.1088/1674-1056/22/1/017301
  contributor:
    fullname: H Bo
– volume: 30
  start-page: 764
  year: 1983
  ident: 829_CR20
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/T-ED.1983.21207
  contributor:
    fullname: G Masetti
– volume: 322
  start-page: 219
  year: 2003
  ident: 829_CR6
  publication-title: J. Non-Cryst. Solids
  doi: 10.1016/S0022-3093(03)00205-9
  contributor:
    fullname: J-L Autran
– volume: 40
  start-page: 278
  year: 1969
  ident: 829_CR30
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1657043
  contributor:
    fullname: M Lenzlinger
– volume: 47
  start-page: 741
  year: 2000
  ident: 829_CR37
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.830988
  contributor:
    fullname: H Satake
– volume: 81
  start-page: 7900
  year: 1997
  ident: 829_CR34
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.365364
  contributor:
    fullname: A Schenk
– ident: 829_CR33
– volume: 504
  start-page: 192
  year: 2006
  ident: 829_CR27
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2005.09.123
  contributor:
    fullname: H Wong
– volume: 47
  start-page: 473
  year: 2000
  ident: 829_CR36
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.822296
  contributor:
    fullname: W-K Chim
– volume: 6
  start-page: 179
  year: 2007
  ident: 829_CR35
  publication-title: J. Comput. Electron
  doi: 10.1007/s10825-006-0077-7
  contributor:
    fullname: M Karner
– volume: 7
  start-page: 1164
  year: 1988
  ident: 829_CR23
  publication-title: IEEE Trans. Comput. Aided Des.
  doi: 10.1109/43.9186
  contributor:
    fullname: C Lombardi
– volume: 47
  start-page: 473
  year: 2000
  ident: 829_CR7
  publication-title: IEEE Trans. Electron. Devices
  doi: 10.1109/16.822296
  contributor:
    fullname: WK Chim
– volume: 81
  start-page: 3431
  year: 2002
  ident: 829_CR11
  publication-title: Appl. Phys. Letts.
  doi: 10.1063/1.1517407
  contributor:
    fullname: JM Howard
– volume: 58
  start-page: 3106
  year: 2011
  ident: 829_CR13
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2011.2159306
  contributor:
    fullname: B Lee
– volume: 23
  start-page: 987
  year: 1979
  ident: 829_CR14
  publication-title: Solid-State Electron
  doi: 10.1016/0038-1101(80)90064-7
  contributor:
    fullname: WA Hill
– volume: XLVI
  start-page: 1055
  year: 1967
  ident: 829_CR18
  publication-title: Bell Syst. Tech. J.
  doi: 10.1002/j.1538-7305.1967.tb01727.x
  contributor:
    fullname: EH Nicollian
SSID ssj0020241
Score 2.065625
SourceID crossref
SourceType Aggregation Database
StartPage 795
Title Role of annealing temperature in the oxide charge distribution in high- $$\kappa $$ κ -based MOS devices: simulation and experiment
Volume 15
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LaxsxEBZuemkPpU_6Rgfn0kVhd6X1envbmpRQSAt1AjkUzOgFptQ2jU3invur-iP6mzqS9qGmNTQFs6xloZU9n2dG0sw3hAxVJrXSElglU8tEBsDGEv_uAmzBQVai8jyzx-9HR6fi3VlxNhjEDMGbtTxQ3_6aV_I_UsU2lKvLkr2GZLtBsQHvUb54RQnj9Z9k_LEJDQRUluDzyh3TVEOT3EYwLi_n2iSeEcm485iuxJXr4NiKGYpfuFcx-QyrFTRvk_3J4f6bOmHO0Onk-MPUZVh5vcLr5Hz-pSn85Y8f-kIBO7xd5atHtDuPffGdaJf-_CIkl6EKBBfgcSXyANcJHhD1FnZ9NN2sHKBVvJWRjbpYrU77jio0mSET-sA0bSWq7Cwww3Qqu4igySP9W1ZFbMo9CeqfViJts6Zxecz8PMZ5xba9SWzDAK5Yyi5-sed6dkPMXJScG2K2vUFu5jgHtwtwmtfdyh8doUDc23y_9ng95HD-PovIQYo8nZO75E4jNFoHvN0jA7O4T25HxJUPyHeHPLq0tEMejZBH5wuKyKMeeTQgj8bIcx088uhw-MljDm_ozx80YI0i1miDtde0Rxo-TdMeaQ_J9O3hyeSINfU8mKrSLXM50qlF76e0wgg0tMICL3UucwCorC0g17w01vIUeK5w4W9HFlTBFWhcpfBHZG-xXJjHhIIyqkK1ojRIoaUGDUYBOs9inIPN0ifkVfsTzlaBtGW2U2RPr9P5GbnVA_c52Vt_3ZgX6JWu5Usv8V-XjI80
link.rule.ids 315,786,790,27957,27958
linkProvider Springer Nature
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Role+of+annealing+temperature+in+the+oxide+charge+distribution+in+high-+%24%24%5Ckappa+%24%24+%CE%BA+-based+MOS+devices%3A+simulation+and+experiment&rft.jtitle=Journal+of+computational+electronics&rft.au=Biswas%2C+Debaleen&rft.au=Chakraborty%2C+Ayan&rft.au=Chakraborty%2C+Supratic&rft.date=2016-09-01&rft.issn=1569-8025&rft.eissn=1572-8137&rft.volume=15&rft.issue=3&rft.spage=795&rft.epage=800&rft_id=info:doi/10.1007%2Fs10825-016-0829-y&rft.externalDBID=n%2Fa&rft.externalDocID=10_1007_s10825_016_0829_y
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1569-8025&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1569-8025&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1569-8025&client=summon